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| FDD6512A/FDU6512A November 2001 FDD6512A/FDU6512A 20V N-Channel PowerTrench(R) MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) , fast switching speed and extremely low RDS(ON) in a small package. Features * 36 A, 20 V RDS(ON) = 21 m @ VGS = 4.5 V RDS(ON) = 31 m @ VGS = 2.5 V * Low gate charge (12 nC typical) * Fast switching * High performance trench technology for extremely low RDS(ON) Applications * DC/DC converter * Motor drives D D G S I-PAK (TO-251AA) GDS G D-PAK TO-252 (TO-252) S o Absolute Maximum Ratings Symbol VDSS VGSS ID TA=25 C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @TC=25C @TA=25C Pulsed (Note 3) (Note 1a) (Note 1a) (Note 3) (Note 1a) (Note 1b) Ratings 20 12 36 10.7 100 43 3.8 1.6 -55 to +175 Units V V A PD Power Dissipation @TC=25C @TA=25C @TA=25C W TJ, TSTG Operating and Storage Junction Temperature Range C Thermal Characteristics RJC RJA RJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient (Note 1) (Note 1a) (Note 1b) 3.5 40 96 C/W C/W C/W Package Marking and Ordering Information Device Marking FDD6512A FDU6512A Device FDD6512A FDU6512A Package D-PAK (TO-252) I-PAK (TO-251) Reel Size 13'' Tube Tape width 12mm N/A Quantity 2500 units 75 (c)2001 Fairchild Semiconductor Corp. FDD6512A/FDU6512A Rev B (W) FDD6512A/FDU6512A Electrical Characteristics Symbol EAS IAS TA = 25C unless otherwise noted Parameter Drain-Source Avalanche Energy Drain-Source Avalanche Current Test Conditions Single Pulse, VDD = 10 V, ID=10A Min Typ Max Units 90 10 mJ A Drain-Source Avalanche Ratings (Note 2) Off Characteristics BVDSS BVDSS TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse (Note 2) VGS = 0 V, ID = 250 A ID = 250 A,Referenced to 25C VDS = 16 V, VGS = 12 V, VGS = -12 V, VGS = 0 V VDS = 0 V VDS = 0 V 20 14 10 100 -100 V mV/C A nA nA On Characteristics VGS(th) VGS(th) TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance VDS = VGS, ID = 250 A ID = 250 A, Referenced to 25C VGS = 4.5 V, ID = 10.7 A VGS = 2.5 V, ID = 9.1 A VGS = 4.5 V, ID = 10.7 A, TJ=125C VGS = 4.5 V, VDS = 5 V VDS = 5 V, ID = 10.7 A 0.6 0.8 -3.2 16 21 22 1.5 V mV/C m 21 31 29 ID(on) gFS 50 50 A S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) 1082 VDS = 10 V, f = 1.0 MHz V GS = 0 V, 277 130 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge 8 VDD = 10 V, VGS = 4.5 V, ID = 1 A, RGEN = 6 8 24 8 12 VDS = 10V, VGS = 4.5 V ID = 10.7 A, 2 3 16 16 38 16 19 ns ns ns ns nC nC nC Drain-Source Diode Characteristics and Maximum Ratings IS VSD Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = 2.3 A (Note 2) 2.3 0.72 1.2 A V Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) RJA = 40C/W when mounted on a 1in pad of 2 oz copper 2 b) RJA = 96C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% PD R DS(ON) 3. Maximum current is calculated as: where PD is maximum power dissipation at TC = 25C and RDS(on) is at TJ(max) and VGS = 10V. Package current limitation is 21A FDD6512A/FDU6512A Rev. B (W) FDD6512A/FDU6512A Typical Characteristics 30 25 ID, DRAIN CURRENT (A) 20 15 10 5 0 0 0.5 1 1.5 2 2.5 3 VDS, DRAIN-SOURCE VOLTAGE (V) 3.5V 3.0V 2.5V 2.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 4.5V 2.5 2 VGS = 2.0V 1.5 2.5V 3.0V 3.5V 4.0V 1 4.5V 0.5 0 5 10 15 20 25 30 ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation with Drain Current and Gate Voltage 0.07 RDS(ON), ON-RESISTANCE (OHM) 1.8 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.6 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 o ID = 10.7A VGS = 4.5V ID = 5.4 A 0.06 0.05 0.04 TA = 0.03 0.02 0.01 0 1 2 3 4 5 VGS, GATE TO SOURCE VOLTAGE (V) 125 C o TA = 25 C o 125 150 175 TJ, JUNCTION TEMPERATURE ( C) Figure 3. On-Resistance Variation withTemperature 30 TA = -55 C 25 ID, DRAIN CURRENT (A) 125 C 20 15 10 5 0 0.5 1 1.5 2 2.5 3 VGS, GATE TO SOURCE VOLTAGE (V) o Figure 4. On-Resistance Variation with Gate-to-Source Voltage 100 25 C o IS, REVERSE DRAIN CURRENT (A) VDS = 5V o VGS = 0V 10 TA = 125oC 1 0.1 0.01 0.001 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) 25oC -55 C o Figure 5. Transfer Characteristics Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature FDD6512A/FDU6512A Rev. B (W) FDD6512A/FDU6512A Typical Characteristics 5 VGS, GATE-SOURCE VOLTAGE (V) ID = 10.7A 4 15V 3 CAPACITANCE (pF) VDS = 5V 10V 1800 1500 CISS 1200 900 600 COSS 300 CRSS 0 0 2 4 6 8 10 12 14 0 4 8 12 16 20 Qg, GATE CHARGE (nC) VDS, DRAIN TO SOURCE VOLTAGE (V) f = 1MHz VGS = 0 V 2 1 0 Figure 7. Gate Charge Characteristics 1000 , DR 100 AIN CU RR EN 10 T (A) 1 D Figure 8. Capacitance Characteristics 200 SINGLE PULSE R J A = 9 6 C / W 150 TA = 25C 100 s 1ms 10ms 100ms 1s 10s P(pk), PEAK TRANSIENT POWER (W) R DS(ON)LIMIT 100 V GS = 10V SINGLE PULSE 0.1 R JA = 96 C/W T A = 25 oC 0.01 0.1 1 o DC I 50 0 10 100 0.001 0.01 0.1 1 10 100 V DS, DRAIN-SOURCE VOLTAGE (V) t 1 , TIME (sec) Figure 9. Maximum Safe Operating Area Figure 10. Single Pulse Maximum Power Dissipation 1 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE D = 0.5 0.2 0.1 0.1 0.05 0.01 R JA (t) = r(t) * R JA R JA = 96C/W 0.02 Single Pulse P(pk) 0.01 t1 t2 0.001 TJ - TA = P * R JA (t) Duty Cycle, D = t 1 / t 2 0.0001 0.0001 0.001 0.01 0.1 t , TIME (sec) 1 1 10 100 300 Figure 11. Transient Thermal Response Curve Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDD6512A/FDU6512A Rev. B (W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM DISCLAIMER FAST (R) FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench (R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER (R) SMART STARTTM STAR*POWERTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET (R) VCXTM STAR*POWER is used under license FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4 |
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